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Defect dynamics in self-catalyzed III–V semiconductor nanowires
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Gott, James A., Beanland, Richard, Fonseka, H. Aruni, Peters, Jonathan J. P., Zhang, Yunyan, Liu, Huiyun and Sánchez, Ana M. (2019) Defect dynamics in self-catalyzed III–V semiconductor nanowires. Nano Letters, 19 (7). pp. 4574-4580. doi:10.1021/acs.nanolett.9b01508 ISSN 1530-6984.
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WRAP-defect-dynamics-self-catalyzed-III–V-semiconductor-nanowires-Gott-2019.pdf - Accepted Version - Requires a PDF viewer. Download (1067Kb) | Preview |
Official URL: https://doi.org/10.1021/acs.nanolett.9b01508
Abstract
The droplet consumption step in self-catalyzed III–V semiconductor nanowires can produce material that contains a high density of line defects. Interestingly, these defects are often associated with twin boundaries and have null Burgers vector, i.e., no long-range strain field. Here, we analyze their stability by considering the forces that act on them and use in situ aberration corrected scanning transmission electron microscopy (STEM) to observe their behavior in GaAsP nanowires (NWs) using short annealing cycles. Their movement appears to be consistent with the thermally activated single- or double-kink mechanisms of dislocation glide, with velocities that do not exceed 1 nm s–1. We find that motion of individual defects depends on their size, position, and surrounding environment and set an upper limit to activation energy around 2 eV. The majority of defects (>70%) are removed by our postgrowth annealing for several seconds at temperatures in excess of 640 °C, suggesting that in situ annealing during growth at lower temperatures would significantly improve material quality. The remaining defects do not move at all and are thermodynamically stable in the nanowire.
Item Type: | Journal Article | |||||||||||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||||||||
SWORD Depositor: | Library Publications Router | |||||||||||||||
Library of Congress Subject Headings (LCSH): | Nanowires, Compound semiconductors, Semiconductors -- Defects, Nanotechnology | |||||||||||||||
Journal or Publication Title: | Nano Letters | |||||||||||||||
Publisher: | American Chemical Society | |||||||||||||||
ISSN: | 1530-6984 | |||||||||||||||
Official Date: | 20 June 2019 | |||||||||||||||
Dates: |
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Volume: | 19 | |||||||||||||||
Number: | 7 | |||||||||||||||
Page Range: | pp. 4574-4580 | |||||||||||||||
DOI: | 10.1021/acs.nanolett.9b01508 | |||||||||||||||
Status: | Peer Reviewed | |||||||||||||||
Publication Status: | Published | |||||||||||||||
Reuse Statement (publisher, data, author rights): | This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acs.nanolett.9b01508 | |||||||||||||||
Access rights to Published version: | Restricted or Subscription Access | |||||||||||||||
Date of first compliant deposit: | 12 August 2019 | |||||||||||||||
Date of first compliant Open Access: | 12 June 2020 | |||||||||||||||
RIOXX Funder/Project Grant: |
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