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On the mobility extraction for HMOSFETs
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UNSPECIFIED (2001) On the mobility extraction for HMOSFETs. SOLID-STATE ELECTRONICS, 45 (3). pp. 527-529. ISSN 0038-1101.
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Abstract
Self-consistent Schroedinger-Poisson calculations have been employed to investigate theoretically the mobility extraction for hetero-MOSFETs or HMOSFETs with a thin gate oxide. In this particular case, the contribution of the cap layer to the gate capacitance is crucial. It is shown that there is a considerable error in the effective mobility when extracted with the common constant capacitance approximation and that application of the split-CV method is essential. (C) 2001 Elsevier Science Ltd. All rights reserved.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Journal or Publication Title: | SOLID-STATE ELECTRONICS | ||||
Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | ||||
ISSN: | 0038-1101 | ||||
Official Date: | March 2001 | ||||
Dates: |
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Volume: | 45 | ||||
Number: | 3 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 527-529 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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