Grant, Nicholas E., Scowcroft, Jennifer R., Pointon, A. I., Al-Amin, Mohammad, Altermatt, Pietro P. and Murphy, John D. (2019) Data for Lifetime instabilities in gallium doped monocrystalline PERC silicon solar cells. [Dataset]

	Microsoft Excel (Experimental data in spreadsheet) 2019-11-14 Open access dataset.xlsx - Published Version Available under License Creative Commons Attribution 4.0. Download (33Kb)
	Plain Text (Readme file) 2019-11-15 readme text for WRAP.txt - Published Version Available under License Creative Commons Attribution 4.0. Download (621b)

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Abstract

Gallium doped silicon is an industrially viable alternative to boron doped silicon for photovoltaics, and is assumed to be immune from light-induced degradation. We have studied light soaking for >1000 h of industrially fabricated passivated emitter and rear cell (PERC) devices formed from monocrystalline gallium and boron doped substrates, with cell properties monitored using a non-contact photoluminescence imaging proxy method. As-fabricated stabilised boron doped cells did not degrade or underwent a slight improvement, whereas as-fabricated gallium doped cells which had not been intentionally stabilised experienced a slight (~5%) deterioration which then recovered. When PERC devices were subjected to a 200–300 °C dark anneal before light soaking, significant differences in the cell degradation signatures were observed. Degradation characteristic of light and elevated temperature induced degradation (LeTID) was observed for boron and gallium PERC solar cells, with the onset of degradation taking longer, and the severity being less, with gallium. Investigation of stripped gallium PERC devices with room temperature surface passivation revealed bulk lifetime degradation correlates with the cell-level degradation. When the cells were stripped and passivated with aluminium oxide, a complete change in the degradation behaviour was observed, with no degradation occurring in the gallium case and boron-oxygen-like degradation observed for boron. This indicates that dielectric passivation is not suitable for lifetime degradation diagnosis in stripped cells. Gallium retains advantages over boron doping with stabilisation processes not generally required, but manufacturers need to be aware of possible low-temperature lifetime instabilities when developing future fabrication processes, such as for passivated contact structures.

Item Type:	Dataset
Subjects:	T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions:	Faculty of Science, Engineering and Medicine > Engineering > Engineering
Type of Data:	Experimental data
Library of Congress Subject Headings (LCSH):	Semiconductors -- Materials, Gallium nitride -- Electric properties, Solar cells -- Design and construction, Gallium -- Synthesis, Silicon solar cells, Direct energy conversion -- Research
Publisher:	University of Warwick, School of Engineering
Official Date:	15 November 2019
Dates:	Date Event 15 November 2019 Published 14 November 2019 Available
Status:	Not Peer Reviewed
Publication Status:	Published
Media of Output (format):	.txt, .xlsx
Access rights to Published version:	Open Access (Creative Commons)
Copyright Holders:	University of Warwick
Description:	The dataset (a single file in XLSX format) contains the data behind the figures in the related paper. Captions to the figures are given in the paper. Abbreviations, variables and methods used are defined in the paper.
Date of first compliant deposit:	15 November 2019
Date of first compliant Open Access:	15 November 2019
RIOXX Funder/Project Grant:	Project/Grant ID RIOXX Funder Name Funder ID EP/M024911/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/R511808/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/J01768X/2 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266 EP/N509796/1 [EPSRC] Engineering and Physical Sciences Research Council http://dx.doi.org/10.13039/501100000266
Related URLs:	Other Related item in WRAP
Contributors:	Contribution Name Contributor ID Depositor Murphy, John D. 55925

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