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The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment
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Renz, A. B., Shah, V. A., Vavasour, Oliver J., Bonyadi, Yeganeh, Li, Fan, Dai, Tianxiang, Baker, G. W. C., Hindmarsh, Steven A., Han, Yan, Walker, Marc, Sharma, Y., Liu, Y., Raghothamachar, B., Dudley, M., Mawby, P. A. (Philip A.) and Gammon, P. M. (2020) The improvement of Mo/4H-SiC Schottky diodes via a P2O5 surface passivation treatment. Journal of Applied Physics, 127 (2). 025704. doi:10.1063/1.5133739 ISSN 0021-8979.
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Official URL: http://dx.doi.org/10.1063/1.5133739
Abstract
Molybdenum (Mo)/4H-silicon carbide (SiC) Schottky barrier diodes have been fabricated with a phosphorus pentoxide (P2O5) surface passivation treatment performed on the SiC surface prior to metallization. Compared to the untreated diodes, the P2O5-treated diodes were found to have a lower Schottky barrier height by 0.11 eV and a lower leakage current by two to three orders of magnitude. Physical characterization of the P2O5-treated Mo/SiC interfaces revealed that there are two primary causes for the improvement in electrical performance. First, transmission electron microscopy imaging showed that nanopits filled with silicon dioxide had formed at the surface after the P2O5 treatment that terminates potential leakage paths. Second, secondary ion mass spectroscopy revealed a high concentration of phosphorus atoms near the interface. While only a fraction of these are active, a small increase in doping at the interface is responsible for the reduction in barrier height. Comparisons were made between the P2O5 pretreatment and oxygen (O2) and nitrous oxide (N2O) pretreatments that do not form the same nanopits and do not reduce leakage current. X-ray photoelectron spectroscopy shows that SiC beneath the deposited P2O5 oxide retains a Si-rich interface unlike the N2O and O2 treatments that consume SiC and trap carbon at the interface. Finally, after annealing, the Mo/SiC interface forms almost no silicide, leaving the enhancement to the subsurface in place, explaining why the P2O5 treatment has had no effect on nickel- or titanium-SiC contacts.
Item Type: | Journal Article | |||||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||
Library of Congress Subject Headings (LCSH): | Silicon carbide , Silicon carbide -- Electric properties , Diodes, Schottky-barrier, Semiconductor-metal boundaries | |||||||||
Journal or Publication Title: | Journal of Applied Physics | |||||||||
Publisher: | American Institute of Physics | |||||||||
ISSN: | 0021-8979 | |||||||||
Official Date: | 10 January 2020 | |||||||||
Dates: |
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Volume: | 127 | |||||||||
Number: | 2 | |||||||||
Article Number: | 025704 | |||||||||
DOI: | 10.1063/1.5133739 | |||||||||
Status: | Peer Reviewed | |||||||||
Publication Status: | Published | |||||||||
Access rights to Published version: | Restricted or Subscription Access | |||||||||
Date of first compliant deposit: | 11 February 2020 | |||||||||
Date of first compliant Open Access: | 24 February 2020 | |||||||||
RIOXX Funder/Project Grant: |
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