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TCAD device modelling and simulation of wide bandgap power semiconductors
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Lophitis, Neophytos, Arvanitopoulos, Anastasios, Perkins, Samuel and Antoniou, Marina (2018) TCAD device modelling and simulation of wide bandgap power semiconductors. In: Disruptive wide bandgap semiconductors, related technologies, and their applications. IntechOpen. ISBN 9781789236682
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Official URL: http://dx.doi.org/10.5772/intechopen.76062
Abstract
Technology computer-aided Design (TCAD) is essential for devices technology development, including wide bandgap power semiconductors. However, most TCAD tools were originally developed for silicon and their performance and accuracy for wide bandgap semiconductors is contentious. This chapter will deal with TCAD device modelling of wide bandgap power semiconductors. In particular, modelling and simulating 3C- and 4H-Silicon Carbide (SiC), Gallium Nitride (GaN) and Diamond devices are examined. The challenges associated with modelling the material and device physics are analyzed in detail. It also includes convergence issues and accuracy of predicted performance. Modelling and simulating defects, traps and the effect of these traps on the characteristics are also discussed.
Item Type: | Book Item | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Publisher: | IntechOpen | ||||
ISBN: | 9781789236682 | ||||
Book Title: | Disruptive wide bandgap semiconductors, related technologies, and their applications | ||||
Official Date: | 2018 | ||||
Dates: |
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DOI: | 10.5772/intechopen.76062 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Open Access (Creative Commons) |
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