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Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study
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UNSPECIFIED (1998) Stoichiometry and discommensuration on InxGa1-xAs/GaAs(001) reconstructed surfaces: A quantitative x-ray diffuse-scattering study. PHYSICAL REVIEW B, 58 (24). pp. 16177-16185. ISSN 1098-0121.
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Abstract
A quantitative estimate of the In/Ga surface concentration ratio in ultrathin (In, Ga)As strained layers, grown by molecular-beam epitaxy on a GaAs(001) substrate, is obtained using grazing incidence x-ray diffraction and diffuse-scattering measurements. The commensurate 2x3 reconstruction is interpreted as due to cation ordering in the surface unit cell, locking the surface composition at the value In2/3Ga1/3As. Incommensurate 2xn reconstructions with n<3 (n>3) are described in terms of indium-depleted (-enriched) surface layers characterized by a statistical distribution of faults in the ideal 2 x 3 atomic arrangement. Within a defined temperature range 450-490 degrees C, a unique correspondence between the incommensurability parameter n and the indium surface fraction is established on the basis of a formulation of the diffuse scattering distribution. [S0163-1829(98)04648-7].
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | PHYSICAL REVIEW B | ||||
Publisher: | AMER PHYSICAL SOC | ||||
ISSN: | 1098-0121 | ||||
Official Date: | 15 December 1998 | ||||
Dates: |
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Volume: | 58 | ||||
Number: | 24 | ||||
Number of Pages: | 9 | ||||
Page Range: | pp. 16177-16185 | ||||
Publication Status: | Published |
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