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Area-selective atomic layer deposition of ZnO by area activation using electron beam-induced deposition
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Mameli, Alfredo, Karasulu, Bora, Verheijen, Marcel A., Barcones, Beatriz, Macco, Bart, Mackus, Adriaan J. M., Kessels, Wilhelmus M. M. Erwin and Roozeboom, Fred (2019) Area-selective atomic layer deposition of ZnO by area activation using electron beam-induced deposition. Chemistry of Materials, 31 (4). pp. 1250-1257. doi:10.1021/acs.chemmater.8b03165 ISSN 0897-4756.
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WRAP-area-selective-atomic-layer-deposition-ZnO-area-activation-electron-beam-induced-deposition-Karasulu-2019.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution Non-commercial No Derivatives 4.0. Download (3317Kb) | Preview |
Official URL: http://dx.doi.org/10.1021/acs.chemmater.8b03165
Abstract
Area-selective atomic layer deposition (ALD) of ZnO was achieved on SiO2 seed layer patterns on H-terminated silicon substrates, using diethylzinc (DEZ) as the zinc precursor and H2O as the coreactant. The selectivity of the ALD process was studied using in situ spectroscopic ellipsometry and scanning electron microscopy, revealing improved selectivity for increasing deposition temperatures from 100 to 300 °C. The selectivity was also investigated using transmission electron microscopy and energy-dispersive X-ray spectroscopy. Density functional theory (DFT) calculations were performed to corroborate the experimental results obtained and to provide an atomic-level understanding of the underlying surface chemistry. A kinetically hindered proton transfer reaction from the H-terminated Si was conceived to underpin the selectivity exhibited by the ALD process. By combining the experimental and DFT results, we suggest that the trend in selectivity with temperature may be due to a strong DEZ or H2O physisorption on the H-terminated Si that hampers high selectivity at low deposition temperature. This work highlights the deposition temperature as an extra process parameter to improve the selectivity.
Item Type: | Journal Article | ||||||
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Subjects: | Q Science > QD Chemistry | ||||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry | ||||||
Library of Congress Subject Headings (LCSH): | Atomic layer deposition , Density functionals, Electron beams | ||||||
Journal or Publication Title: | Chemistry of Materials | ||||||
Publisher: | American Chemical Society | ||||||
ISSN: | 0897-4756 | ||||||
Official Date: | 26 February 2019 | ||||||
Dates: |
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Volume: | 31 | ||||||
Number: | 4 | ||||||
Page Range: | pp. 1250-1257 | ||||||
DOI: | 10.1021/acs.chemmater.8b03165 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||
Date of first compliant deposit: | 16 June 2021 | ||||||
Date of first compliant Open Access: | 16 June 2021 | ||||||
RIOXX Funder/Project Grant: |
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