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Peculiarities of electronic properties of delta(Sb) layers in epitaxial silicon. IV. Hopping conductivity and nonlinear effects
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UNSPECIFIED (1998) Peculiarities of electronic properties of delta(Sb) layers in epitaxial silicon. IV. Hopping conductivity and nonlinear effects. LOW TEMPERATURE PHYSICS, 24 (3). pp. 182-188. ISSN 1063-777X.
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Abstract
The temperature dependence of the kinetic electronic characteristics (conductivity, magnetoresistance, Hall e.m.f.) is studied in the temperature interval 3-50 K on epitaxial silicon crystals having a delta[Sb] layer with sheet concentrations of Sb atoms 1 X 10(13) and 5 x 10(12) cm(-2). The shape of the current-voltage characteristics is determined at various temperatures. It is found that the low-temperature kinetic phenomena in these objects are governed by the hopping mechanism of conductivity. A variable range hopping conductivity is observed at sufficiently low temperatures (< 10 K). The nonlinearity of the current-voltage characteristics is explained by the theory of non-Ohmic hopping conductivity in moderately strong electric fields. (C) 1998 American Institute of Physics. [S1063-777X(98)00603-3].
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | LOW TEMPERATURE PHYSICS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 1063-777X | ||||
Official Date: | March 1998 | ||||
Dates: |
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Volume: | 24 | ||||
Number: | 3 | ||||
Number of Pages: | 7 | ||||
Page Range: | pp. 182-188 | ||||
Publication Status: | Published |
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