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Bipolar degradation monitoring of 4H-SiC MOSFET power devices by electroluminescence measurements
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Lachichi, Amel and Mawby, Philip. A. (2021) Bipolar degradation monitoring of 4H-SiC MOSFET power devices by electroluminescence measurements. In: IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society, Toronto, ON, Canada , 13-16 Oct 2021 ISBN 9781665435543. doi:10.1109/IECON48115.2021.9589563 ISSN 2577-1647.
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Official URL: http://dx.doi.org/10.1109/IECON48115.2021.9589563
Abstract
Expansion and contraction of Shockley type stacking faults (SF) due to the glide of basal plane dislocations are reported for the first time in a commercial 4H-SiC MOSFET bare die rated at 100A/1.2kV. Electroluminescence of the laboratory fabricated power MOSFET body diode is measured to detect the bipolar degradation which provides firm evidence of the presence of a 3C- like regions affected by SF. Accelerated bipolar degradation tests were performed on the device and it was found that the on-resistance which is a key indicator of the degradation level, increased by 15.6 % during the first stress while it decreased by 6.9 % in the second stress. Other related SiC material defects were as well detected. The electroluminescence spectra is an excellent tool for monitoring SiC power devices deterioration related to material defects without performing destructive tests such as SEM.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Publisher: | IEEE | ||||
ISBN: | 9781665435543 | ||||
ISSN: | 2577-1647 | ||||
Book Title: | IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society | ||||
Official Date: | 13 November 2021 | ||||
Dates: |
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DOI: | 10.1109/IECON48115.2021.9589563 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | IECON 2021 – 47th Annual Conference of the IEEE Industrial Electronics Society | ||||
Type of Event: | Conference | ||||
Location of Event: | Toronto, ON, Canada | ||||
Date(s) of Event: | 13-16 Oct 2021 |
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