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Uncooled InSb/In1−xAlxSb mid‐infrared emitter
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Ashley, T., Elliott, C. T., Gordon, N. T., Hall, Ralph, Johnson, A. D. and Pryce, G. J. (1994) Uncooled InSb/In1−xAlxSb mid‐infrared emitter. Applied Physics Letters, 64 (18). pp. 2433-2435. doi:10.1063/1.111981 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.111981
Abstract
Using heterostructures of InSb/In1−xAlxSb, grown by molecular beam epitaxy, diodes have been fabricated which emit at room temperature with a peak wavelength in the range 5.5–5.8 μm and an internal efficiency of 0.2%
Item Type: | Journal Article | ||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||
Journal or Publication Title: | Applied Physics Letters | ||||||
Publisher: | American Institute of Physics | ||||||
ISSN: | 0003-6951 | ||||||
Official Date: | May 1994 | ||||||
Dates: |
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Volume: | 64 | ||||||
Number: | 18 | ||||||
Page Range: | pp. 2433-2435 | ||||||
DOI: | 10.1063/1.111981 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access |
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