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Comparison of short circuit failure modes in SiC Planar MOSFETs, SiC trench MOSFETs and SiC Cascode JFETs
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Bashar, Erfan, Wu, Ruizhu, Agbo, Nereus, Mendy, Simon, Jahdi, Saeed, Ortiz Gonzalez, Jose Angel and Alatise, Olayiwola M. (2021) Comparison of short circuit failure modes in SiC Planar MOSFETs, SiC trench MOSFETs and SiC Cascode JFETs. In: 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA), Redondo Beach, CA, USA, 7-11 Nov 2021 pp. 384-388. ISBN 9781665401821. doi:10.1109/WiPDA49284.2021.9645092
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WRAP-comparison-short-circuit-failure-modes-SiC-Planar-MOSFETs-SiC-trench-MOSFETs-SiC-Cascode-JFETs-2021.pdf - Accepted Version - Requires a PDF viewer. Download (1247Kb) | Preview |
Official URL: http://dx.doi.org/10.1109/WiPDA49284.2021.9645092
Abstract
In this paper, a comprehensive comparative analysis is performed on the short circuit (SC) withstand time and failure modes between a 650 V SiC Planar MOSFET, a 650 V SiC Trench MOSFET and a 650 V SiC Cascode JFET. The short circuit tests have been performed at a DC link voltage of 400 V with gate turn-OFF voltages at 0 V and -5 V. The results show that the SiC Cascode JFET failed in a source-to-drain short circuit with the gate still capable of blocking voltage while the SiC Planar and Trench MOSFETs failed with the Gate-Source (V GS ) terminal short circuited and Drain-Source (V DS ) terminals still capable of blocking voltage. Furthermore, short circuit withstand times measured on the SiC Planar and Trench MOSFETs showed an increase (20% for the Planar MOSFET and 9% for the Trench MOSFET) when the device gate voltages were turned-OFF with -5V compared to 0V. This was due to the increased inductance of the negative voltage gate driver reducing the peak short circuit current. In the case of the SiC Cascode JFET, there was no dependence of the short-circuit withstand time on the V GS turn-OFF voltage.
Item Type: | Conference Item (Paper) | ||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Short circuits, Electric fault location, Silicon carbide, Metal oxide semiconductor field-effect transistors , Metal oxide semiconductor field-effect transistors -- Reliability, Field-effect transistors | ||||||
Publisher: | IEEE | ||||||
ISBN: | 9781665401821 | ||||||
Book Title: | 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) | ||||||
Official Date: | 21 December 2021 | ||||||
Dates: |
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Page Range: | pp. 384-388 | ||||||
DOI: | 10.1109/WiPDA49284.2021.9645092 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Reuse Statement (publisher, data, author rights): | © 2021 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 4 February 2022 | ||||||
Date of first compliant Open Access: | 7 February 2022 | ||||||
RIOXX Funder/Project Grant: |
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Conference Paper Type: | Paper | ||||||
Title of Event: | 2021 IEEE 8th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) | ||||||
Type of Event: | Workshop | ||||||
Location of Event: | Redondo Beach, CA, USA | ||||||
Date(s) of Event: | 7-11 Nov 2021 |
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