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Investigation of performance of double-trench SiC Power MOSFETs in forward and reverse quadrant operation
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Yang, Juefei, Jahdi, Saeed, Stark, Bernard, Mellor, Phil, Alatise, Olayiwola M. and Ortiz-Gonzalez, Jose Angel (2021) Investigation of performance of double-trench SiC Power MOSFETs in forward and reverse quadrant operation. In: PCIM Europe digital days 2021, Virtual conference, 03-07 May 2021. Published in: PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management ISBN 9783800755158.
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WRAP-Investigation-performance-double-trench-SiC-Power-MOSFETs-forward-reverse-quadrant-operation-2021.pdf - Accepted Version - Requires a PDF viewer. Download (3524Kb) | Preview |
Official URL: https://ieeexplore.ieee.org/document/9472238
Abstract
In this paper, dynamic switching performance at 1st quadrant and 3rd quadrant operation of Silicon and Silicon Carbide (SiC) trench, double-trench, superjunction and planar power MOSFETs is analysed through a wide range of experimental measurements. The devices are evaluated on a high voltage clamped inductive switching test rig and switched with a range of switching rates at elevated junction temperatures. It is shown experimentally that, at 1st quadrant, CoolSiC MOSFET and SiC Double trench MOSFET show good stability in regard to temperature variations. Silicon superjunction MOSFETs perform unacceptably at turn-OFF transient due to their large input capacitance and are unstable with temperature variation due to the more temperature-dependent CGD. SiC Planar MOSFET also performs poorly at turn-ON switching due to its low transconductance and gate threshold voltage variation leading to variations of switching rate with temperature at both turn-ON and turn-OFF transients. At 3rd quadrant, Silicon Superjunction MOSFET causes large switching loss due to its long reverse recovery process, while SiC Double trench MOSFET and CoolSiC MOSFET show stable performance with temperature variation due to the negligible reverse recovery charge.
Item Type: | Conference Item (Paper) | ||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Silicon carbide , Silicon carbide -- Electric properties, Metal oxide semiconductor field-effect transistors , Wide gap semiconductors , Semiconductor switches , Energy conversion | ||||||
Journal or Publication Title: | PCIM Europe digital days 2021; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management | ||||||
Publisher: | VDE | ||||||
ISBN: | 9783800755158 | ||||||
Official Date: | 2 July 2021 | ||||||
Dates: |
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Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 8 February 2022 | ||||||
Date of first compliant Open Access: | 8 February 2022 | ||||||
Conference Paper Type: | Paper | ||||||
Title of Event: | PCIM Europe digital days 2021 | ||||||
Type of Event: | Conference | ||||||
Location of Event: | Virtual conference | ||||||
Date(s) of Event: | 03-07 May 2021 | ||||||
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