The Library
Investigation on the degradations of parallel-connected 4H-SiC MOSFETs under repetitive UIS stresses
Tools
Mao, Hua, Qiu, Guanqun, Jiang, Xiaofeng, Jiang, Huaping, Zhong, Xiaohan, Tang, Lei, Zhang, Yifu, Ran, Li and Wu, Yuping (2022) Investigation on the degradations of parallel-connected 4H-SiC MOSFETs under repetitive UIS stresses. IEEE Transactions on Electron Devices, 69 (2). pp. 650-657. doi:10.1109/TED.2021.3134139 ISSN 0018-9383.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Official URL: http://dx.doi.org/10.1109/TED.2021.3134139
Abstract
Parallel devices in nonuniform conditions can easily lead to reduced overall reliability or even failure due to uneven energy distribution. Especially under long-term avalanche stresses, the degradation of the device may have a great impact on the electrical parameters and performance. To study the degradation tendency and aging mechanism of parallel-connected silicon carbide (SiC) MOSFET, the repetitive unclamped inductive switching (UIS) experiments are carried out in this article. Technology computer-aided design (TCAD) simulations are utilized to simulate the temperature change and current distribution of the chip during an avalanche. The results showed that for planar and trench devices, the electrical parameters drifts are different during repetitive avalanches. The degradation rates are unequal for parallel devices with different case temperatures. Two degradation mechanisms, including hot holes injection and trapping in the gate oxide and metal aging, are found to dominate in the repetitive avalanche process. The findings are helpful for better understanding of degradations for parallel repetitive avalanches in device applications.
Item Type: | Journal Article | ||||||
---|---|---|---|---|---|---|---|
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Journal or Publication Title: | IEEE Transactions on Electron Devices | ||||||
Publisher: | IEEE | ||||||
ISSN: | 0018-9383 | ||||||
Official Date: | February 2022 | ||||||
Dates: |
|
||||||
Volume: | 69 | ||||||
Number: | 2 | ||||||
Page Range: | pp. 650-657 | ||||||
DOI: | 10.1109/TED.2021.3134139 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Restricted or Subscription Access |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |