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Performance of wide-bandgap gallium nitride vs silicon carbide cascode transistors
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Gunaydin, Yasin, Jahdi, Saeed, Alatise, Olayiwola M., Gonzalez, Jose Ortiz, Wu, Ruizhu, Stark, Bernard, Hedayati, Mohammad, Yuan, Xibo and Mellor, Phil (2020) Performance of wide-bandgap gallium nitride vs silicon carbide cascode transistors. In: 2020 IEEE Energy Conversion Congress and Exposition (ECCE), Detroit, MI, USA, 11-15 Oct 2020 pp. 239-245. ISBN 9781728158266. doi:10.1109/ECCE44975.2020.9236187
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Official URL: http://dx.doi.org/10.1109/ECCE44975.2020.9236187
Abstract
Wide-bandgap (WBG) cascodes combine the advantages of gate drivability and reliability of silicon MOSFETs with the conversion efficiency of WBG devices. In cascodes, a low voltage silicon MOSFET drives a vertical SiC JFET or a lateral GaN HEMT. This paper will present the first systematic comparison of the WBG cascodes considering static & dynamic performance, 3 rd quadrant operation and avalanche ruggedness, as well as the temperature sensitivities. The results show that the GaN cascode outperforms the SiC cascode in switching performance, however, demonstrates is more temperature sensitive at on-state. A model is developed to predict the dI DS /dt and its derivative against R G . Whilst turn-ON dI DS /dt and dV DS /dt have positive temperature coefficients in the SiC cascode and negative coefficients in the GaN cascode, the SiC cascode is more avalanche rugged, whereas the GaN cascode is incapable of unclamped inductive switching.
Item Type: | Conference Item (Paper) | ||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
Library of Congress Subject Headings (LCSH): | Gallium nitride, Silicon carbide -- Electric properties, Power electronics, Wide gap semiconductors -- Materials, Power semiconductors | ||||||
ISBN: | 9781728158266 | ||||||
Book Title: | 2020 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||||
Official Date: | 30 October 2020 | ||||||
Dates: |
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Page Range: | pp. 239-245 | ||||||
DOI: | 10.1109/ECCE44975.2020.9236187 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Reuse Statement (publisher, data, author rights): | © 2020 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||
Date of first compliant deposit: | 15 February 2022 | ||||||
Date of first compliant Open Access: | 25 February 2022 | ||||||
RIOXX Funder/Project Grant: |
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Conference Paper Type: | Paper | ||||||
Title of Event: | 2020 IEEE Energy Conversion Congress and Exposition (ECCE) | ||||||
Type of Event: | Conference | ||||||
Location of Event: | Detroit, MI, USA | ||||||
Date(s) of Event: | 11-15 Oct 2020 |
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