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The elimination of surface cross-hatch from relaxed, limited-area Si1-xGex buffer layers
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UNSPECIFIED (1997) The elimination of surface cross-hatch from relaxed, limited-area Si1-xGex buffer layers. APPLIED PHYSICS LETTERS, 71 (17). pp. 2517-2519. ISSN 0003-6951.
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Abstract
The influence of lateral dimensions on the relaxation and surface topography of linearly graded Si1-xGex buffer layers has been investigated. A dramatic change in the relaxation mechanism has been observed for depositions on Si mesa pillars of lateral dimensions 10 mu m and below. Misfit dislocations are able to extend unhindered and terminate at the edges of the growth zone, yielding a surface free of cross-hatch. For lateral dimensions in excess of 10 mu m orthogonal misfit interactions occur and relaxation is dominated by the modified Frank-Read (MFR) mechanism. The stress fields associated with the MFR dislocation pile-ups result in a pronounced cross-hatch topography. (C) 1997 American Institute of Physics. [S0003-6951(97)04443-4].
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | APPLIED PHYSICS LETTERS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 27 October 1997 | ||||
Dates: |
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Volume: | 71 | ||||
Number: | 17 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 2517-2519 | ||||
Publication Status: | Published |
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