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The influence of dynamic threshold voltage drift on third quadrant characteristics of SiC MOSFET
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Tang, Lei, Jiang, Huaping, Mao, Hua, Wu, Zebing, Zhong, Xiaohan, Qi, Xiaowei and Ran, Li (2022) The influence of dynamic threshold voltage drift on third quadrant characteristics of SiC MOSFET. In: 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), Wuhan, China, 25-27 Aug 2021. Published in: 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) pp. 483-487. ISBN 9781665418515. doi:10.1109/WiPDAAsia51810.2021.9656049
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Official URL: http://dx.doi.org/10.1109/WiPDAAsia51810.2021.9656...
Abstract
The conduction characteristics of the third quadrant of SiC MOSFET include the current distribution of the body diode and the MOS channel, which are sensitive to many factors. In this paper, the influence of dynamic threshold voltage drift on third quadrant characteristics of SiC MOSFET is studied. By combining the equivalent potential model, TCAD simulation, and experiment, it is revealed that once the threshold voltage drifts under dynamic gate voltage stress, the static and dynamic characteristics of the third quadrant of SiC MOSFET will change. Furthermore, the current sharing of parallel devices is also affected by dynamic threshold voltage drift. These results provide an effective guide for the third quadrant application of SiC MOSFET.
Item Type: | Conference Item (Paper) | ||||
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||
Journal or Publication Title: | 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) | ||||
Publisher: | IEEE | ||||
ISBN: | 9781665418515 | ||||
Book Title: | 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) | ||||
Official Date: | 3 January 2022 | ||||
Dates: |
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Page Range: | pp. 483-487 | ||||
DOI: | 10.1109/WiPDAAsia51810.2021.9656049 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access | ||||
Conference Paper Type: | Paper | ||||
Title of Event: | 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) | ||||
Type of Event: | Conference | ||||
Location of Event: | Wuhan, China | ||||
Date(s) of Event: | 25-27 Aug 2021 |
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