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Thermal characterization of direct wafer bonded Si-on-SiC
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Field, Daniel E., Pomeroy, James W., Gity, Farzan, Schmidt, Michael, Torchia, Pasqualino, Li, Fan, Gammon, Peter M., Shah, Vishal and Kuball, Martin (2022) Thermal characterization of direct wafer bonded Si-on-SiC. Applied Physics Letters, 120 (11). 113503. doi:10.1063/5.0080668 ISSN 0003-6951.
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WRAP-thermal-characterization-direct-wafer-bonded-Si-on-SiC-2022.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (2223Kb) | Preview |
Official URL: https://doi.org/10.1063/5.0080668
Abstract
Direct bonded Si-on-SiC is an interesting alternative to silicon-on-insulator (SOI) for improved thermal management in power conversion and radio frequency applications in space. We have used transient thermoreflectance and finite element simulations to characterize the thermal properties of direct bonded Si-on-4H–SiC samples, utilizing a hydrophobic and hydrophilic bonding process. In both instances, the interface has good thermal properties resulting in TBReff values of 6 + 4/−2 m2 K GW−1 (hydrophobic) and 9 + 3/−2 m2 K GW−1 (hydrophilic). Two-dimensional finite element simulations for an equivalent MOSFET showed the significant thermal benefit of using Si-on-SiC over SOI. In these simulations, a MOSFET with a 200 nm thick, 42 μm wide Si drift region was recreated on a SOI structure (2 μm buried oxide) and on the Si-on-SiC material characterized here. At 5 W mm−1 power dissipation, the Si-on-SiC was shown to result in a >60% decrease in temperature rise compared to the SOI structure.
Item Type: | Journal Article | |||||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | |||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||
SWORD Depositor: | Library Publications Router | |||||||||
Library of Congress Subject Headings (LCSH): | Silicon-on-insulator technology , Semiconductors -- Thermal properties, Metal oxide semiconductor field-effect transistors | |||||||||
Journal or Publication Title: | Applied Physics Letters | |||||||||
Publisher: | American Institute of Physics | |||||||||
ISSN: | 0003-6951 | |||||||||
Official Date: | 2022 | |||||||||
Dates: |
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Volume: | 120 | |||||||||
Number: | 11 | |||||||||
Article Number: | 113503 | |||||||||
DOI: | 10.1063/5.0080668 | |||||||||
Status: | Peer Reviewed | |||||||||
Publication Status: | Published | |||||||||
Access rights to Published version: | Open Access (Creative Commons) | |||||||||
Date of first compliant deposit: | 26 April 2022 | |||||||||
Date of first compliant Open Access: | 27 April 2022 | |||||||||
RIOXX Funder/Project Grant: |
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