The Library
On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures
Tools
UNSPECIFIED (1997) On the low-temperature mobility of holes in gated oxide Si/SiGe heterostructures. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 12 (9). pp. 1064-1071. ISSN 0268-1242.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Abstract
A detailed comparison is made between theory and experiment for the low-temperature mobility of holes in gated oxide, coherently strained Si/SiGe heterostructures. We conclude that the mobility is mainly limited by interface impurities, conventional surface roughness and strain fluctuations; by contrast, we argue that alloy scattering is comparatively weak. Comments regarding possible mobility degradation due to oxide formation are also made.
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
||||
Journal or Publication Title: | SEMICONDUCTOR SCIENCE AND TECHNOLOGY | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0268-1242 | ||||
Official Date: | September 1997 | ||||
Dates: |
|
||||
Volume: | 12 | ||||
Number: | 9 | ||||
Number of Pages: | 8 | ||||
Page Range: | pp. 1064-1071 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |