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High-performance field effect transistors from solution processed carbon nanotubes
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Wang, Huiliang, Luo, Jun, Robertson, Alex, Ito, Yasuhiro, Yan, Wenjing, Lang, Volker, Zaka, Mujtaba, Schäffel, Franziska, Rümmeli, Mark H., Briggs, G. Andrew D. and Warner, Jamie H. (2010) High-performance field effect transistors from solution processed carbon nanotubes. ACS Nano, 4 (11). pp. 6659-6664. doi:10.1021/nn1020743 ISSN 1936-0851.
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Official URL: http://dx.doi.org/10.1021/nn1020743
Abstract
Nanoelectronic field effect transistors (FETs) are produced using solution processed individual carbon nanotubes (CNTs), synthesized by both arc discharge and laser ablation methods. We show that the performance of solution processed FETs approaches that of CVD-grown FETs if the nanotubes have minimal lattice defects and are free from surface contamination. This is achieved by treating the nanotubes to a high-temperature vacuum annealing process and using 1,2-dichloroethane for dispersion. We present CNT FETs with mobilities of up to 3546 cm2/(V s), transconductance of 4.22 μS, on-state conductance of 9.35 μS and on/off ratios as high as 106. High-resolution transmission electron microscopy is used to examine the presence of catalyst particles and amorphous carbon on the surface and Raman spectroscopy is used to examine the lattice defects, both of which lead to reduced device performance.
Item Type: | Journal Article | ||||||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||||
Journal or Publication Title: | ACS Nano | ||||||||||
Publisher: | American Chemical Society | ||||||||||
ISSN: | 1936-0851 | ||||||||||
Official Date: | 23 November 2010 | ||||||||||
Dates: |
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Volume: | 4 | ||||||||||
Number: | 11 | ||||||||||
Page Range: | pp. 6659-6664 | ||||||||||
DOI: | 10.1021/nn1020743 | ||||||||||
Status: | Peer Reviewed | ||||||||||
Publication Status: | Published | ||||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||||
Copyright Holders: | American Chemical Society | ||||||||||
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