The Library
A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of Germanium and Vanadium
Tools
Renz, A. B., Vavasour, Oliver J., Rommel, Mathias, Baker, G. W. C., Gammon, Peter M., Dai, Tianxiang, Li, Fan, Antoniou, Marina, Mawby, Philip A. and Shah, Vishal (2022) A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of Germanium and Vanadium. Materials Science Forum, 1062 . pp. 523-527. doi:10.4028/p-92w3k6 ISSN 1662-9752.
|
PDF
WRAP-study-high-resistivity-semi-insulating-4H-SiC-epilayers-formed-via-the-implantation-Germanium-Vanadium-2022.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (1216Kb) | Preview |
Official URL: https://doi.org/10.4028/p-92w3k6
Abstract
A systematic germanium (Ge) and vanadium (V) study on 4H-SiC epitaxial layers is presented. Electrical results of TLM structures which were fabricated on these layers revealed that highly-doped Ge and V-implanted layers showed extremely low specific contact resistivity, down to 2 x 10-7 Ω.cm2. Current flow in the conducting state of Schottky barrier diodes has been successfully suppressed in some implanted layers, with highly V doped samples showing current density values of approximately 1 x 10-5 Acm-2 at 10 V. DLTS spectra reveal the presence of germanium and vanadium centers in the respective samples as well as novel peaks which are likely related to the formation of a novel GeN center.
Item Type: | Journal Article | ||||||
---|---|---|---|---|---|---|---|
Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology > TJ Mechanical engineering and machinery |
||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
SWORD Depositor: | Library Publications Router | ||||||
Library of Congress Subject Headings (LCSH): | Mechanical engineering, Materials science, Germanium -- Analysis, Vanadium | ||||||
Journal or Publication Title: | Materials Science Forum | ||||||
Publisher: | Trans Tech Publications Ltd. | ||||||
ISSN: | 1662-9752 | ||||||
Official Date: | 31 May 2022 | ||||||
Dates: |
|
||||||
Volume: | 1062 | ||||||
Page Range: | pp. 523-527 | ||||||
DOI: | 10.4028/p-92w3k6 | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||
Date of first compliant deposit: | 10 August 2022 | ||||||
Date of first compliant Open Access: | 24 August 2022 |
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |
Downloads
Downloads per month over past year