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Investigations of short circuit robustness of SiC IGBTs with considerations on physics properties and design
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Zhang, L., Dai, Tianxiang, Gammon, Peter M., Lophitis, Neophytos , Udrea, Florin, Tiwari, Amit, Gonzalez, Jose Ortiz, Renz, A. B., Shah, Vishal, Mawby, Philip A. and Antoniou, Marina (2022) Investigations of short circuit robustness of SiC IGBTs with considerations on physics properties and design. Materials Science Forum, 1062 . pp. 504-508. doi:10.4028/p-13z22g ISSN 1662-9752.
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Official URL: https://doi.org/10.4028/p-13z22g
Abstract
The commercial success of silicon carbide (SiC) diodes and MOSFETs for the automotive industry has led many in the field to begin developing ultra-high voltage (UHV) SiC insulated gate bipolar transistors (IGBTs), rated from 6 kV to 30 kV, for future grid conversion applications. Despite this early interest, there has been little work conducted on the optimal layout for the SiC IGBT, most early work seeking to overcome difficulties in fabricating the devices without a P+ substrate. In this paper, numerical TCAD simulations are used to examine the link between the carrier lifetime of SiC IGBTs and their short circuit capability. For the planar devices, simulations show that increasing carrier lifetime from 1 to 10 μs, has not only a profound effect reducing on-state losses, but also increases short circuit withstand time (SCWT) by 39%. Two retrograde p-well designs are also investigated, the optimal device for SCWT having a 100 nm channel region of 5×1016 cm-3, with this increasing to a peak value of 2×1018 cm-3, in a 700 nm region beneath the channel.
Item Type: | Journal Article | ||||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) T Technology > TJ Mechanical engineering and machinery |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||
SWORD Depositor: | Library Publications Router | ||||||
Library of Congress Subject Headings (LCSH): | Silicon carbide, Mechanical engineering, Diodes, Short circuits, Metal oxide semiconductor field-effect transistors -- Design and construction | ||||||
Journal or Publication Title: | Materials Science Forum | ||||||
Publisher: | Trans Tech Publications Ltd. | ||||||
ISSN: | 1662-9752 | ||||||
Official Date: | 31 May 2022 | ||||||
Dates: |
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Volume: | 1062 | ||||||
Page Range: | pp. 504-508 | ||||||
DOI: | 10.4028/p-13z22g | ||||||
Status: | Peer Reviewed | ||||||
Publication Status: | Published | ||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||
Date of first compliant deposit: | 10 August 2022 | ||||||
Date of first compliant Open Access: | 24 August 2022 |
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