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Enhanced photoconductivity at dislocations in SrTiO 3
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Kissel, Maximilian, Porz, Lukas, Frömling, Till, Nakamura, Atsutomo, Rödel, Jürgen and Alexe, Marin (2022) Enhanced photoconductivity at dislocations in SrTiO 3. Advanced Materials, 34 (32). 2203032. doi:10.1002/adma.202203032 ISSN 0935-9648.
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Official URL: https://doi.org/10.1002/adma.202203032
Abstract
Dislocations are 1D crystallographic line defects and are usually seen as detrimental to the functional properties of classic semiconductors. It is shown here that this not necessarily accounts for oxide semiconductors in which dislocations are capable of boosting the photoconductivity. Strontium titanate single crystals are controllably deformed to generate a high density of ordered dislocations of two slip systems possessing different mesoscopic arrangements. For both slip systems, nanoscale conductive atomic force microscope investigations reveal a strong enhancement of the photoconductivity around the dislocation cores. Macroscopic in‐plane measurements indicate that the two dislocation systems result in different global photoconductivity behavior despite the similar local enhancement. Depending on the arrangement, the global photoresponse can be increased by orders of magnitude. Additionally, indications for a bulk photovoltaic effect enabled by dislocation‐surrounding strain fields are observed for the first time. This proves that dislocations in oxide semiconductors can be of large interest for tailoring photoelectric functionalities. Direct evidence that electronic transport is confined to the dislocation core points to a new emerging research field.
Item Type: | Journal Article | |||||||||||||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | |||||||||||||||
SWORD Depositor: | Library Publications Router | |||||||||||||||
Library of Congress Subject Headings (LCSH): | Atomic force microscopy, Crystals -- Defects, Dislocations in crystals, Microelectrodes, Photoconductivity, Metal oxide semiconductors | |||||||||||||||
Journal or Publication Title: | Advanced Materials | |||||||||||||||
Publisher: | Wiley - V C H Verlag GmbH & Co. KGaA | |||||||||||||||
ISSN: | 0935-9648 | |||||||||||||||
Official Date: | 11 August 2022 | |||||||||||||||
Dates: |
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Volume: | 34 | |||||||||||||||
Number: | 32 | |||||||||||||||
Article Number: | 2203032 | |||||||||||||||
DOI: | 10.1002/adma.202203032 | |||||||||||||||
Status: | Peer Reviewed | |||||||||||||||
Publication Status: | Published | |||||||||||||||
Access rights to Published version: | Open Access (Creative Commons) | |||||||||||||||
Copyright Holders: | © 2022 The Authors. Advanced Materials published by Wiley-VCH GmbH | |||||||||||||||
Date of first compliant deposit: | 29 July 2022 | |||||||||||||||
Date of first compliant Open Access: | 29 July 2022 | |||||||||||||||
RIOXX Funder/Project Grant: |
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