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Two-dimensional localization in GeSn
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Gul, Y., Holmes, S. N., Cho, Chang-Woo, Piot, B., Myronov, Maksym and Pepper, M. (2022) Two-dimensional localization in GeSn. Journal of Physics: Condensed Matter, 34 (48). 485301. doi:10.1088/1361-648x/ac9814 ISSN 1361-648X.
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Official URL: https://doi.org/10.1088/1361-648x/ac9814
Abstract
Localization behaviour is a characteristic feature of the p-type GeSn quantum well (QW) system in a metal–insulator–semiconductor device. The transition to strongly localized behaviour is abrupt with thermally activated conductivity and a high temperature intercept of 0.12 × e 2 ħ −1 at a hole carrier density 1.55 × 1011 cm−2. The activation energy for the conductivity in the localized state is 0.40 ± 0.05 meV compared to an activation energy of ∼0.1 meV for conductivity activation to a mobility edge at carrier densities >1.55 × 1011 cm−2. Insulating behaviour can occur from a system that behaves as though it is in a minimum metallic state, albeit at high temperature, or from a conductivity greater than a minimum metallic state behaviour showing that local disorder conditions with local differences in the density of states are important for the onset of localization. In the presence of a high magnetic field, thermally activated conductivity is present down to Landau level filling factor < 1/2 but without a magnetic-field-dependent carrier density or a variable range hopping (VRH) transport behaviour developing even with conductivity ≪e 2 h −1. In the localized transport regime in p-type doped Ge0.92Sn0.08 QWs the VRH mechanism is suppressed at temperatures >100 mK and this makes this two-dimensional system ideal for future many body localization studies in disordered hole gases that can be thermally isolated from a temperature reservoir.
Item Type: | Journal Article | ||||||||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||||||
SWORD Depositor: | Library Publications Router | ||||||||||||
Library of Congress Subject Headings (LCSH): | Electron transport, Metals -- Electric properties, Metal insulator semiconductors, Magnetic fields | ||||||||||||
Journal or Publication Title: | Journal of Physics: Condensed Matter | ||||||||||||
Publisher: | IOP Publishing | ||||||||||||
ISSN: | 1361-648X | ||||||||||||
Official Date: | November 2022 | ||||||||||||
Dates: |
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Volume: | 34 | ||||||||||||
Number: | 48 | ||||||||||||
Article Number: | 485301 | ||||||||||||
DOI: | 10.1088/1361-648x/ac9814 | ||||||||||||
Status: | Peer Reviewed | ||||||||||||
Publication Status: | Published | ||||||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||||||
Date of first compliant deposit: | 28 October 2022 | ||||||||||||
Date of first compliant Open Access: | 28 October 2022 | ||||||||||||
RIOXX Funder/Project Grant: |
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