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Room-temperature fabrication of p-type SnO semiconductors using ion-beam-assisted deposition
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Januar, Mochamad, Prakoso, Suhendro Purbo, Zhong, Chia-Wen, Lin, Horng-Chih, Li, Chuan, Hsieh, Jang-Hsing, Liu, Kuo-Kang and Liu, Kou-Chen (2022) Room-temperature fabrication of p-type SnO semiconductors using ion-beam-assisted deposition. ACS Applied Materials & Interfaces, 14 (41). pp. 46726-46737. doi:10.1021/acsami.2c12617 ISSN 1944-8244.
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WRAP-room-temperature-fabrication-p-type-SnO-semiconductors-using-ion-beam-assisted-deposition-Liu-2022.pdf - Accepted Version - Requires a PDF viewer. Download (4Mb) | Preview |
Official URL: https://doi.org/10.1021/acsami.2c12617
Abstract
Over the past decade, SnO has been considered a promising p-type oxide semiconductor. However, achieving high mobility in the fabrication of p-type SnO films is still highly dependent on the post-annealing procedure, which is often used to make SnO, due to its metastable nature, readily convertible to SnO2 and/or intermediate phases. This paper demonstrates a fully room-temperature fabrication of p-type SnOx thin films using ion-beam-assisted deposition. This technique offers independent control between ion density, via the ion-gun anode current and oxygen flow rate, and ion energy, via the ion-gun anode voltage, thus being able to optimize the optical band gap and the hole mobility of the SnO films to reach 2.70 eV and 7.89 cm2 V–1 s–1, respectively, without the need for annealing. Remarkably, this is the highest mobility reported for p-type SnO films whose fabrication was carried out entirely at room temperature. Using first-principles calculations, we rationalize that the high mobility is associated with the fine-tuning of the Sn-rich-related defects and lattice densification, obtained by controlling the density and energy of the oxygen ions, both of which optimize the spatial overlap of the valence bands to form a continuous conduction path for the holes. Moreover, due to the absence of the annealing process, the Raman spectra reveal no significant signatures of microcrystal formation in the films. This behavior contrasts with the case involving the air-annealing procedure, where a complex interaction occurs between the formation of SnO microcrystals and the formation of SnOx intermediate phases. This interplay results in variations in grain texture within the film, leading to a lower optimum Hall mobility of only 5.17 cm2 V–1 s–1. Finally, we demonstrate the rectification characteristics of all-fabricated-at-room-temperature SnOx-based p–n devices to confirm the viability of the p-type SnOx films.
Item Type: | Journal Article | ||||||||||||
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Subjects: | Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||||||
SWORD Depositor: | Library Publications Router | ||||||||||||
Library of Congress Subject Headings (LCSH): | Semiconductors -- Materials, Semiconductors -- Electric properties , Ions, Thin film, Ion bombardment | ||||||||||||
Journal or Publication Title: | ACS Applied Materials & Interfaces | ||||||||||||
Publisher: | American Chemical Society | ||||||||||||
ISSN: | 1944-8244 | ||||||||||||
Official Date: | 19 October 2022 | ||||||||||||
Dates: |
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Volume: | 14 | ||||||||||||
Number: | 41 | ||||||||||||
Page Range: | pp. 46726-46737 | ||||||||||||
DOI: | 10.1021/acsami.2c12617 | ||||||||||||
Status: | Peer Reviewed | ||||||||||||
Publication Status: | Published | ||||||||||||
Reuse Statement (publisher, data, author rights): | This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https://doi.org/10.1021/acsami.2c12617 | ||||||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||||||
Date of first compliant deposit: | 8 December 2022 | ||||||||||||
Date of first compliant Open Access: | 7 October 2023 | ||||||||||||
RIOXX Funder/Project Grant: |
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