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Impact of threshold voltage shifting on junction temperature sensing in GaN HEMTs
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Etoz, Burhan, Gonzalez, Jose Ortiz, Deb, Arkadeep, Jahdi, Saeed and Alatise, Olayiwola M. (2022) Impact of threshold voltage shifting on junction temperature sensing in GaN HEMTs. In: 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 05-09 Sep 2022. Published in: 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) ISBN 9789075815399.
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WRAP-impact-threshold-voltage-shifting-junction-temperature-sensing-GaN-HEMTs-2022.pdf - Accepted Version - Requires a PDF viewer. Download (2978Kb) | Preview |
Official URL: https://ieeexplore.ieee.org/abstract/document/9907...
Abstract
Junction temperature sensing in GaN HEMTs has been identified as a critical challenge for condition monitoring especially under power cycling conditions. The use of temperature sensitive electrical parameters has been widely studied. In GaN devices, the ON-state resistance and gate leakage currents have been identified as TSEPs as both are junction temperature sensitive. Circuits capable of measuring the gate leakage currents in commercially available GaN HEMTs have previously been presented, however, the impact of variability in the threshold voltage on junction temperature sensing requires further investigation. In this paper, junction temperature measurements are implemented using the gate current as a TSEP and are compared with the junction temperature inferred from the ON-state resistance. The measured junction temperatures were verified against electrothermal simulations using manufacturer provided thermal networks. Threshold shift from charge trapping in Schottky GaN HEMTs has been shown to impact the temperature dependence of the gate leakage currents and ON-state resistance. It is important to account for these changes when using them as temperature sensitive electric parameters for real time junction temperature estimation in GaN HEMTs.
Item Type: | Conference Item (Paper) | ||||||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||||||
Divisions: | Faculty of Science, Engineering and Medicine > Engineering > Engineering | ||||||||
Library of Congress Subject Headings (LCSH): | Gallium nitride , Power electronics, Power semiconductors | ||||||||
Journal or Publication Title: | 2022 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) | ||||||||
Publisher: | IEEE | ||||||||
ISBN: | 9789075815399 | ||||||||
Official Date: | 17 October 2022 | ||||||||
Dates: |
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Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Reuse Statement (publisher, data, author rights): | © 2022 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. | ||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||
Date of first compliant deposit: | 28 October 2022 | ||||||||
Date of first compliant Open Access: | 31 October 2022 | ||||||||
RIOXX Funder/Project Grant: |
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Conference Paper Type: | Paper | ||||||||
Title of Event: | 24th European Conference on Power Electronics and Applications (EPE'22 ECCE Europe) | ||||||||
Type of Event: | Conference | ||||||||
Location of Event: | Hanover, Germany | ||||||||
Date(s) of Event: | 05-09 Sep 2022 | ||||||||
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