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Kelvin force gradient microscopy of pBTTT transistors in both the linear and saturation electrical regimes
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Bain, S., Smith, D. (David C.), Wilson, Neil R. and Carrasco-Orozco, M. (2009) Kelvin force gradient microscopy of pBTTT transistors in both the linear and saturation electrical regimes. Applied Physics Letters, Vol.95 (No.14). article no. 143304 . doi:10.1063/1.3242001 ISSN 0003-6951.
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Official URL: http://dx.doi.org/10.1063/1.3242001
Abstract
Kelvin force gradient microscopy of pBTTT transistors biased in both the linear and saturation electrical regimes is presented. The linear regime potential profiles are dominated by the contacts and the true material mobility, 0.11 +/- 0.01 cm(2) V-1 s(-1), is ten times higher than that derived from device electrical characteristics. In the saturation regime the potential profiles are well fitted by a simple model assuming a very weakly gate potential dependent mobility in the range 0.021-0.028 cm(2) V-1 s(-1). These measurements indicate that contrary to the conclusion drawn from the device electrical characteristics, the linear mobility is larger than the saturation mobility. (C) 2009 American Institute of Physics. [doi:10.1063/1.3242001]
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||
Library of Congress Subject Headings (LCSH): | Field-effect transistors, Thin film transistors | ||||
Journal or Publication Title: | Applied Physics Letters | ||||
Publisher: | American Institute of Physics | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 5 October 2009 | ||||
Dates: |
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Volume: | Vol.95 | ||||
Number: | No.14 | ||||
Number of Pages: | 3 | ||||
Page Range: | article no. 143304 | ||||
DOI: | 10.1063/1.3242001 | ||||
Status: | Peer Reviewed | ||||
Publication Status: | Published | ||||
Access rights to Published version: | Restricted or Subscription Access |
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