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Holes outperform electrons in group IV semiconductor materials
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Myronov, Maksym, Kycia, Jan, Waldron, Philip, Jiang, Weihong, Barrios, Pedro, Bogan, Alex, Coleridge, Peter and Studenikin, Sergei (2023) Holes outperform electrons in group IV semiconductor materials. Small Science, 3 (4). 2200094. doi:10.1002/smsc.202200094 ISSN 2688-4046.
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Small Science - 2023 - Myronov - Holes Outperform Electrons in Group IV Semiconductor Materials.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (1553Kb) | Preview |
Official URL: https://doi.org/10.1002/smsc.202200094
Abstract
A record‐high mobility of holes, reaching 4.3 × 106 cm2 V−1 s−1 at 300 mK in an epitaxial strained germanium (s‐Ge) semiconductor, grown on a standard silicon wafer, is reported. This major breakthrough is achieved due to the development of state‐of‐the‐art epitaxial growth technology culminating in superior monocrystalline quality of the s‐Ge material platform with a very low density of background impurities and other imperfections. As a consequence, the hole mobility in s‐Ge appears to be ≈2 times higher than the highest electron mobility in strained silicon. In addition to the record mobility, this material platform reveals a unique combination of properties, which are a very large and tuneable effective g*‐factor (>18), a very low percolation density (5 × 109 cm−2) and a small effective mass (0.054 m 0). This long‐sought combination of parameters in one material system is important for the research and development of low‐temperature electronics with reduced Joule heating and for quantum‐electronics circuits based on spin qubits.
Item Type: | Journal Article | ||||||||
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Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
SWORD Depositor: | Library Publications Router | ||||||||
Library of Congress Subject Headings (LCSH): | Semiconductors, Germanium, Quantum theory, Electronic structure, Heterostructures, Magnetic fields | ||||||||
Journal or Publication Title: | Small Science | ||||||||
Publisher: | Wiley-Blackwell Publishing, Inc. | ||||||||
ISSN: | 2688-4046 | ||||||||
Official Date: | April 2023 | ||||||||
Dates: |
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Volume: | 3 | ||||||||
Number: | 4 | ||||||||
Article Number: | 2200094 | ||||||||
DOI: | 10.1002/smsc.202200094 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Reuse Statement (publisher, data, author rights): | ** Article version: VoR ** From Wiley via Jisc Publications Router ** History: received 10-11-2022; rev-recd 15-01-2023; epub 02-03-2023. ** Licence for VoR version of this article: http://creativecommons.org/licenses/by/4.0/ | ||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||
Copyright Holders: | © 2023 The Authors. Small Science published by Wiley-VCH GmbH | ||||||||
Date of first compliant deposit: | 3 April 2023 | ||||||||
Date of first compliant Open Access: | 4 April 2023 | ||||||||
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