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High‐throughput area‐selective spatial atomic layer deposition of SiO 2 with interleaved small molecule inhibitors and integrated back‐etch correction for low defectivity
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Karasulu, Bora, Roozeboom, Fred and Mameli, Alfredo (2023) High‐throughput area‐selective spatial atomic layer deposition of SiO 2 with interleaved small molecule inhibitors and integrated back‐etch correction for low defectivity. Advanced Materials . 2301204. doi:10.1002/adma.202301204 ISSN 0935-9648.
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Advanced Materials - 2023 - Karasulu - High‐Throughput Area‐Selective Spatial Atomic Layer Deposition of SiO2 with.pdf - Published Version - Requires a PDF viewer. Available under License Creative Commons Attribution 4.0. Download (3421Kb) | Preview |
Official URL: https://doi.org/10.1002/adma.202301204
Abstract
A first‐of‐its‐kind area‐selective deposition process for SiO2 is developed consisting of film deposition with interleaved exposures to small molecule inhibitors (SMIs) and back‐etch correction steps, within the same spatial atomic layer deposition (ALD) tool. The synergy of these aspects results in selective SiO2 deposition up to ~23 nm with high selectivity and throughput, with SiO2 growth area and ZnO nongrowth area. The selectivity is corroborated by both X‐ray photoelectron spectroscopy (XPS) and low‐energy ion scattering spectroscopy (LEIS). The selectivity conferred by two different SMIs, ethylbutyric acid, and pivalic acid has been compared experimentally and theoretically. Density Functional Theory (DFT) calculations reveal that selective surface functionalization using both SMIs is predominantly controlled thermodynamically, while the better selectivity achieved when using trimethylacetic acid can be explained by its higher packing density compared to ethylbutyric acid. By employing the trimethylacetic acid as SMI on other starting surfaces (Ta2O5, ZrO2, etc.) and probing the selectivity, a broader use of carboxylic acid inhibitors for different substrates is demonstrated. It is believed that the current results highlight the subtleties in SMI properties such as size, geometry, and packing, as well as interleaved back‐etch steps, which are key in developing ever more effective strategies for highly selective deposition processes.
Item Type: | Journal Article | ||||||||
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Subjects: | Q Science > QC Physics Q Science > QD Chemistry |
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Chemistry | ||||||||
SWORD Depositor: | Library Publications Router | ||||||||
Library of Congress Subject Headings (LCSH): | Atomic layer deposition , Density functionals , Low energy electron diffraction, Chemical vapor deposition, Silica | ||||||||
Journal or Publication Title: | Advanced Materials | ||||||||
Publisher: | Wiley - V C H Verlag GmbH & Co. KGaA | ||||||||
ISSN: | 0935-9648 | ||||||||
Official Date: | 2023 | ||||||||
Dates: |
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Article Number: | 2301204 | ||||||||
DOI: | 10.1002/adma.202301204 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||
Copyright Holders: | © 2023 The Authors. Advanced Materials published by Wiley-VCH GmbH | ||||||||
Date of first compliant deposit: | 6 June 2023 | ||||||||
Date of first compliant Open Access: | 7 June 2023 | ||||||||
RIOXX Funder/Project Grant: |
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