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Antimony diffusion in strained and relaxed Si1-xGex
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UNSPECIFIED (1997) Antimony diffusion in strained and relaxed Si1-xGex. In: International Conference on Diffusion in Materials (DIMAT 96), NORDKIRCHEN, GERMANY, AUG 05-09, 1996. Published in: DEFECT AND DIFFUSION FORUM, 143 (Part 2). pp. 1131-1134. ISSN 1012-0386.
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Abstract
Following our preliminary report of studies of antimony diffusion in silicon-germanium alloys [1], we now publish our full report of the diffusion profiles and our analysis together with TEM studies of the perfection of the Si1-xGex layers. The diffusion of antimony is characterised by a higher diffusivity in the alloy than in silicon from which we infer a higher vacancy mobility and/or vacancy concentration in Si1-xGex than in Si.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | DEFECT AND DIFFUSION FORUM | ||||
Publisher: | TRANS TECH-SCITEC PUBLICATIONS LTD | ||||
ISSN: | 1012-0386 | ||||
Official Date: | 1997 | ||||
Dates: |
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Volume: | 143 | ||||
Number: | Part 2 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 1131-1134 | ||||
Publication Status: | Published | ||||
Title of Event: | International Conference on Diffusion in Materials (DIMAT 96) | ||||
Location of Event: | NORDKIRCHEN, GERMANY | ||||
Date(s) of Event: | AUG 05-09, 1996 |
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