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Peculiarities in the electron properties of delta(Sb)-layers in epitaxial silicon .3. Electron-phonon relaxation
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UNSPECIFIED (1997) Peculiarities in the electron properties of delta(Sb)-layers in epitaxial silicon .3. Electron-phonon relaxation. LOW TEMPERATURE PHYSICS, 23 (4). pp. 303-307. ISSN 1063-777X.
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Abstract
Complex studies of weak electron localization, electron-electron interaction, and electron overheating in Si crystals containing a delta(Sb)-layer with various concentrations of Sb atoms are carried out in order to obtain information on the characteristic times of inelastic electron relaxation. The temperature dependence of the electron-phonon relaxation time tau(ep) derived from the electron overheating effect can be described by the dependence tau(ep) proportional to T-P, where p congruent to 3.7 +/- 0.3, which corresponds to the case q(T)l < l (q(T) is the wave vector of the thermal phonon and l the electron mean free path). (C) 1997 American Institute of Physics.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | LOW TEMPERATURE PHYSICS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 1063-777X | ||||
Official Date: | April 1997 | ||||
Dates: |
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Volume: | 23 | ||||
Number: | 4 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 303-307 | ||||
Publication Status: | Published |
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