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Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices
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UNSPECIFIED (1997) Fully pseudomorphic Si/SiGe/Si heterostructures for p-channel field effect devices. In: European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices, STRASBOURG, FRANCE, JUN 04-07, 1996. Published in: THIN SOLID FILMS, 294 (1-2). pp. 160-165. ISSN 0040-6090.
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Abstract
A variety of electrical measurements on the Si/Si1-xGex/Si heterostructure are surveyed. From these measurements it has been possible to deduce effective masses and their dependence on carrier sheet density, the density of heterointerface charge and the interface roughness parameters, and the deformation potential for acoustic phonon scattering. Same of this information is used in a discussion of the room temperature performance of a metal-oxide semiconductor gated enhancement mode device.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | THIN SOLID FILMS | ||||
Publisher: | ELSEVIER SCIENCE SA LAUSANNE | ||||
ISSN: | 0040-6090 | ||||
Official Date: | 15 February 1997 | ||||
Dates: |
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Volume: | 294 | ||||
Number: | 1-2 | ||||
Number of Pages: | 6 | ||||
Page Range: | pp. 160-165 | ||||
Publication Status: | Published | ||||
Title of Event: | European-Materials-Research-Society 1996 Spring Meeting, Symposium D: Group IV Heterostructures, Physics and Devices | ||||
Location of Event: | STRASBOURG, FRANCE | ||||
Date(s) of Event: | JUN 04-07, 1996 |
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