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In situ observation of domain wall lateral creeping in a ferroelectric capacitor
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Cai, Songhua, Guo, Changqing, Niu, Ben, Xie, Lin, Addiego, Christopher, Wu, Di, Wang, Peng, Lau, Shu Ping, Huang, Houbing and Pan, Xiaoqing (2023) In situ observation of domain wall lateral creeping in a ferroelectric capacitor. Advanced Functional Materials, 33 (50). 2304606. doi:10.1002/adfm.202304606 ISSN 1616-3028.
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Official URL: https://doi.org/10.1002/adfm.202304606
Abstract
As a promising candidate for next‐generation nonvolatile memory devices, ferroelectric oxide films exhibit many emergent phenomena with functional applications, making understanding polarization switching and domain evolution behaviors of fundamental importance. However, tracking domain wall motion in ferroelectric oxide films with high spatial resolution remains challenging. Here, an in situ biasing approach for direct atomic‐scale observations of domain nucleation and sideways motion is presented. By accurately controlling the applied electric field, the lateral translational speed of the domain wall can decrease to less than 2.2 Å s−1, which is observable with atomic resolution STEM imaging. In situ observations on a capacitor structured PbZr0.1Ti0.9O3/La0.7Sr0.3MnO3 heterojunction demonstrate the unique creeping behavior of a domain wall under a critical electric field, with the atomic structure of the creeping domain wall revealed. Moreover, the evolution of the metastable domain wall forms an elongated morphology, which contains a large proportion of charged segments. Phase‐field simulations unveil the competition between gradient, elastic, and electrostatic energies that decide this unique domain wall creeping and morphology variation. This work paves the way toward a complete fundamental understanding of domain wall physics and potential modulations of domain wall properties in real devices.
Item Type: | Journal Article | ||||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
SWORD Depositor: | Library Publications Router | ||||||||
Journal or Publication Title: | Advanced Functional Materials | ||||||||
Publisher: | Wiley | ||||||||
ISSN: | 1616-3028 | ||||||||
Official Date: | 8 December 2023 | ||||||||
Dates: |
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Volume: | 33 | ||||||||
Number: | 50 | ||||||||
Article Number: | 2304606 | ||||||||
DOI: | 10.1002/adfm.202304606 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Re-use Statement: | This is the peer reviewed version of the following article: Cai, Songhua, Guo, Changqing, Niu, Ben, Xie, Lin, Addiego, Christopher, Wu, Di, Wang, Peng, Lau, Shu Ping, Huang, Houbing and Pan, Xiaoqing (2023) In situ observation of domain wall lateral creeping in a ferroelectric capacitor. Advanced Functional Materials, which has been published in final form at https://doi.org/10.1002/adfm.202304606. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited | ||||||||
Access rights to Published version: | Restricted or Subscription Access | ||||||||
Date of first compliant deposit: | 25 October 2023 | ||||||||
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