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Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .1. General physical pattern
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UNSPECIFIED (1996) Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .1. General physical pattern. FIZIKA NIZKIKH TEMPERATUR, 22 (10). pp. 1166-1173. ISSN 0132-6414.
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Abstract
The variation of electronic kinetic characteristics (conductivity, magnetoresistance, Hall emf) with temperature has been studied over a temperature range 1.6-300 K in epitaxial Si crystals involving delta(Sb) layer with a different sheet concentration of Sb doping atoms. It has been established for the first time that at the temperatures above 30 K the properties of these samples reflect the behavior of electrons not only ill the very delta-layer but also in the adjacent regions showing the alloyed semiconductor properties with a clearly defined temperature region of exponential variation of resistance with inverse temperature.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | FIZIKA NIZKIKH TEMPERATUR | ||||
Publisher: | FIZIKA NIZKIKH TEMPERATUR | ||||
ISSN: | 0132-6414 | ||||
Official Date: | October 1996 | ||||
Dates: |
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Volume: | 22 | ||||
Number: | 10 | ||||
Number of Pages: | 8 | ||||
Page Range: | pp. 1166-1173 | ||||
Publication Status: | Published |
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