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Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .2. Effects of weak localization and electron-electron interaction
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UNSPECIFIED (1996) Peculiarities of electronic properties of delta<Sb> layers in epitaxial Si .2. Effects of weak localization and electron-electron interaction. FIZIKA NIZKIKH TEMPERATUR, 22 (10). pp. 1174-1185. ISSN 0132-6414.
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Abstract
The temperature (from 1.5 to 2 K) and magnetic field (up to 4.5 T) dependences of conductivity and Hall's emf have been studied in delta[Sb]-layers of Si with a different Hall's concentration of charge carriers. It is shown that these dependences can be described to a high degree of accuracy by the quantum corrections to Conductivity associated with effects of weak localization of electron and electron-electron interaction in a two-dimensional system. The temperature dependence of electron phase relaxation time, the spin-orbit interaction time and the parameter lambda(D) of electron-electron interaction have been determined. It is found that decreasing concentration of electron in a delta-layer involves a decrease in lambda(D) that may be explained by the peculiarities of screening processes in a two-dimensional electronic system.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | FIZIKA NIZKIKH TEMPERATUR | ||||
Publisher: | FIZIKA NIZKIKH TEMPERATUR | ||||
ISSN: | 0132-6414 | ||||
Official Date: | October 1996 | ||||
Dates: |
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Volume: | 22 | ||||
Number: | 10 | ||||
Number of Pages: | 12 | ||||
Page Range: | pp. 1174-1185 | ||||
Publication Status: | Published |
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