The Library
Fabrication of SiGe quantum devices by electron-beam induced damage
Tools
UNSPECIFIED (1997) Fabrication of SiGe quantum devices by electron-beam induced damage. SUPERLATTICES AND MICROSTRUCTURES, 21 (1). pp. 29-36. ISSN 0749-6036.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Abstract
The effects of electron beam irradiation damage has been investigated in Si/SiGe heterostructures. The damage to SiGe two-dimensional hole gases (2DHGs) was measured as a function of accelerating voltage and electron dose. For 40 keV electrons at a dose of 2 C m(-2) (typical PMMA resist values), the material properties were not significantly altered. For 100 keV and higher energy electrons, the irradiated material became more resistive at 300 K as the electron energies were increased. The material became highly resistive at low temperatures and froze out at between 20 and 30 K. The 2DHGs also became more resistive at 300 K when the irradiation dose was increased. A number of narrow channel devices were fabricated on high mobility SiGe two-dimensional electron gases (2DEGs) using the damage technique and gated using Schottky gates. Plateaux were observed in the conductance as a function of gate voltage. Random telegraph signals (RTSs) were observed from a 10 mu m-wide Hall bar irradiated with 300 keV electrons at a dose of 10(5) C m(-2). (C) 1997 Academic Press Limited
Item Type: | Journal Article | ||||
---|---|---|---|---|---|
Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | SUPERLATTICES AND MICROSTRUCTURES | ||||
Publisher: | ACADEMIC PRESS LTD | ||||
ISSN: | 0749-6036 | ||||
Official Date: | 1997 | ||||
Dates: |
|
||||
Volume: | 21 | ||||
Number: | 1 | ||||
Number of Pages: | 8 | ||||
Page Range: | pp. 29-36 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |