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Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature
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Myronov, Maksym and Colston, Gerard B. (2024) Single step silicon carbide heteroepitaxy on a silicon wafer at reduced temperature. Materials Today Communications, 38 . 108312. doi:10.1016/j.mtcomm.2024.108312 ISSN 2352-4928.
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Official URL: http://doi.org/10.1016/j.mtcomm.2024.108312
Abstract
A single step growth approach for wafer-scale homogeneous cubic silicon carbide (3C-SiC) heteroepitaxy, using chemical vapour deposition (CVD), on a silicon (Si) substrate is demonstrated. Residual biaxial tensile strain causing a wafer bow is eliminated in the 3C-SiC epilayer via in-situ defects engineering and heteroepitaxy at reduced temperature. Thermal mismatch between the 3C-SiC epilayer and substrate is minimised by a substantial reduction of growth temperature, down to ∼1000 °C. Heteroepitaxy of high quality, fully relaxed 3C-SiC epilayers with minimal wafer bow is demonstrated, made possible by careful process optimisation. Unusually very high growth rate of 3C-SiC of > 10 µm/hr is achieved. At the same time the epilayer is free from any other silicon carbide (SiC) polytype inclusions. Moreover, the reduced growth temperature unlocks the ability to deposit high quality 3C-SiC epilayers within traditional Si-based cold walled CVD reactors, enabling the growth of such thin films on unprecedently high volumes and wafer diameters up to 300 mm and above.
Item Type: | Journal Article | ||||||||
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Divisions: | Faculty of Science, Engineering and Medicine > Science > Physics | ||||||||
Journal or Publication Title: | Materials Today Communications | ||||||||
Publisher: | Elsevier Ltd | ||||||||
ISSN: | 2352-4928 | ||||||||
Official Date: | March 2024 | ||||||||
Dates: |
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Volume: | 38 | ||||||||
Article Number: | 108312 | ||||||||
DOI: | 10.1016/j.mtcomm.2024.108312 | ||||||||
Status: | Peer Reviewed | ||||||||
Publication Status: | Published | ||||||||
Access rights to Published version: | Open Access (Creative Commons) | ||||||||
Date of first compliant deposit: | 3 April 2024 | ||||||||
Date of first compliant Open Access: | 3 April 2024 |
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