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Residual strain in Si-Si1-xGex quantum dots
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UNSPECIFIED (1996) Residual strain in Si-Si1-xGex quantum dots. In: 7th International Conference on Modulated Semiconductor Structures (MSS-7), MADRID, SPAIN, JUL 10-14, 1995. Published in: SOLID-STATE ELECTRONICS, 40 (1-8 Sp. Iss. SI). pp. 383-386. ISSN 0038-1101.
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Abstract
Quantum dots of 50-60 nm diameter fabricated from both Si-Si1-xGex (x = 0.1-0.3) strained layer superlattices and a strain symmetrized Si-9-Ge-6 superlattice were investigated by photoluminescence and Raman scattering. It was found that the residual strain in 50 nm etched quantum dots can be as large as 50% of a corresponding pseudomorphic structure. In addition, both the photoluminescence intensity and quenching temperature of these dots increase as compared to the corresponding as-grown superlattices. These improved optical properties may be due to a combined effect of lateral quantum confinement and a possible indirect-direct bandgap transition in the dots induced by the change of strain field during the nanofabrication process.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering Q Science > QC Physics |
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Journal or Publication Title: | SOLID-STATE ELECTRONICS | ||||
Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | ||||
ISSN: | 0038-1101 | ||||
Official Date: | 1996 | ||||
Dates: |
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Volume: | 40 | ||||
Number: | 1-8 Sp. Iss. SI | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 383-386 | ||||
Publication Status: | Published | ||||
Title of Event: | 7th International Conference on Modulated Semiconductor Structures (MSS-7) | ||||
Location of Event: | MADRID, SPAIN | ||||
Date(s) of Event: | JUL 10-14, 1995 |
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