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Ultrasound generation in single-crystal silicon using a pulsed Nd:YAG laser
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UNSPECIFIED (1996) Ultrasound generation in single-crystal silicon using a pulsed Nd:YAG laser. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 29 (5). pp. 1345-1348. ISSN 0022-3727.
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Abstract
The performance of a Q-switched Nd:YAG laser as an ultrasonic source in a single-crystal silicon sample has been studied using a wide-bandwidth modified Michelson interferometer as an absolute displacement sensor. At low power densities the source is an extended buried thermoelastic source; however, the thermal expansion is less than the contraction due to the negative pressure coefficient of the energy gap and the illuminated region contracts rather than expands. Above a certain power density, ablation occurs, giving rise to a localized normal force at the surface of the sample.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | JOURNAL OF PHYSICS D-APPLIED PHYSICS | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISSN: | 0022-3727 | ||||
Official Date: | 14 May 1996 | ||||
Dates: |
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Volume: | 29 | ||||
Number: | 5 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 1345-1348 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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