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Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains
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UNSPECIFIED (1996) Reduction of parasitic bipolar transistor action and punchthrough susceptibility in MOSFETs using Si/Si1-xGex sources and drains. ELECTRONICS LETTERS, 32 (3). pp. 269-270. ISSN 0013-5194.
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Abstract
Silicon CMOS devices are subject to some limitations as the dimensions are scaled down for VLSI applications. The incorporation of SiGe into the p-channel device can reduce parasitic bipolar action and punchthrough susceptibility. The authors compare the properties of elevated source and drain devices with and without Si1-xGex in the source and drain regions. We show that the parasitic bipolar gain is reduced by a factor of 18 and that the punchthrough effects seen in silicon devices are absent in the Si0.8Ge0.2 devices.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Journal or Publication Title: | ELECTRONICS LETTERS | ||||
Publisher: | IEE-INST ELEC ENG | ||||
ISSN: | 0013-5194 | ||||
Official Date: | 1 February 1996 | ||||
Dates: |
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Volume: | 32 | ||||
Number: | 3 | ||||
Number of Pages: | 2 | ||||
Page Range: | pp. 269-270 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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