The Library
Chemical composition of luminescent porous silicon layers
Tools
UNSPECIFIED (1995) Chemical composition of luminescent porous silicon layers. In: Institute-of-Physics Conference on Microscopy of Semiconducting Materials 1995, OXFORD UNIV, OXFORD, ENGLAND, MAR 20-23, 1995. Published in: MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 146 pp. 519-522. ISBN 0-7503-0347-6. ISSN 0951-3248.
Research output not available from this repository.
Request-a-Copy directly from author or use local Library Get it For Me service.
Abstract
In this study we have used high resolution electron energy loss spectroscopy performed in a scanning transmission electron microscope to probe the chemical nature of porous silicon layers grown in electrolytes of different hydrofluoric acid concentration. Dramatic shifts of the plasmon peaks and of the Si L-edges between bulk Si and SiO2 indicate that in porous silicon layers some sort of silicon suboxide is present depending on the preparation conditions of the layers. The presence of this phase might affect the luminescence properties of porous silicon.
Item Type: | Conference Item (UNSPECIFIED) | ||||
---|---|---|---|---|---|
Subjects: | Q Science > QC Physics | ||||
Series Name: | INSTITUTE OF PHYSICS CONFERENCE SERIES | ||||
Journal or Publication Title: | MICROSCOPY OF SEMICONDUCTING MATERIALS 1995 | ||||
Publisher: | IOP PUBLISHING LTD | ||||
ISBN: | 0-7503-0347-6 | ||||
ISSN: | 0951-3248 | ||||
Editor: | Cullis, AG and StatonBevan, AE | ||||
Official Date: | 1995 | ||||
Dates: |
|
||||
Volume: | 146 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 519-522 | ||||
Publication Status: | Published | ||||
Title of Event: | Institute-of-Physics Conference on Microscopy of Semiconducting Materials 1995 | ||||
Location of Event: | OXFORD UNIV, OXFORD, ENGLAND | ||||
Date(s) of Event: | MAR 20-23, 1995 |
Data sourced from Thomson Reuters' Web of Knowledge
Request changes or add full text files to a record
Repository staff actions (login required)
View Item |