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Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon
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UNSPECIFIED (1995) Electrochemical capacitance-voltage depth profiling of heavily boron-doped silicon. In: 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference, STRASBOURG, FRANCE, MAY 22-26, 1995. Published in: JOURNAL OF CRYSTAL GROWTH, 157 (1-4). pp. 109-112. ISSN 0022-0248.
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Abstract
The electrochemical capacitance-voltage profiling (eCV) technique is employed to measure the carrier concentration in heavily boron-doped Si, grown by molecular beam epitaxy. Secondary ion mass spectrometry (SIMS) and Hall measurements are also carried out for comparison. The carrier concentrations obtained by eCV match well with the Hall measurements. The results indicate that the eCV technique is capable of probing carrier concentrations well into the 10(20) cm(-3) range with a good precision. The relative merits of the eCV and SIMS depth profiling are shown to be useful in the cm analysis of boron incorporation behaviour at doping levels above solubility limits.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QD Chemistry | ||||
Journal or Publication Title: | JOURNAL OF CRYSTAL GROWTH | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0022-0248 | ||||
Official Date: | December 1995 | ||||
Dates: |
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Volume: | 157 | ||||
Number: | 1-4 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 109-112 | ||||
Publication Status: | Published | ||||
Title of Event: | 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference | ||||
Location of Event: | STRASBOURG, FRANCE | ||||
Date(s) of Event: | MAY 22-26, 1995 |
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