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Two-dimensional hole gas in SiGe heterostructures: Electrical properties and field effect applications
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UNSPECIFIED (1995) Two-dimensional hole gas in SiGe heterostructures: Electrical properties and field effect applications. In: 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference, STRASBOURG, FRANCE, MAY 22-26, 1995. Published in: JOURNAL OF CRYSTAL GROWTH, 157 (1-4). pp. 353-361. ISSN 0022-0248.
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Abstract
Si-SiGe heterostructures offer realistic prospects for field effect transistors of enhanced performance and are being given serious consideration by the electronics industry. The author discusses our knowledge of the parameters influencing the mobility and drift velocity of holes in these materials which have already been demonstrated to exceed those in the silicon pMOS device.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | Q Science > QD Chemistry | ||||
Journal or Publication Title: | JOURNAL OF CRYSTAL GROWTH | ||||
Publisher: | ELSEVIER SCIENCE BV | ||||
ISSN: | 0022-0248 | ||||
Official Date: | December 1995 | ||||
Dates: |
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Volume: | 157 | ||||
Number: | 1-4 | ||||
Number of Pages: | 9 | ||||
Page Range: | pp. 353-361 | ||||
Publication Status: | Published | ||||
Title of Event: | 6th International Symposium on Silicon Molecular Beam Epitaxy of the 1995 E-MRS Spring Conference | ||||
Location of Event: | STRASBOURG, FRANCE | ||||
Date(s) of Event: | MAY 22-26, 1995 |
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