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The epitaxial growth of IV-VI heterostructures and superlattices on (001)Si
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UNSPECIFIED (1995) The epitaxial growth of IV-VI heterostructures and superlattices on (001)Si. In: Workshop on Molecular Beam Epitaxy-Growth Physics and Technology (MBE-GPT 94), WARSAW, POLAND, DEC 12-15, 1994. Published in: THIN SOLID FILMS, 267 (1-2). pp. 134-137. ISSN 0040-6090.
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Abstract
We report for the first time the use of rare-earth chalcogenides as buffer layers on silicon substrates prior to the high vacuum epitaxy of IV-VI compounds for the growth of thin film heterostructures and superlattices. The results of X-ray diffraction characterisation showed that YbS grows at 900-950 degrees C on (001) Si as a high-quality single crystal layer with an X-ray rocking curve half width delta = 300-500 arcsec. Such buffer layers allow us to grow single-crystal IV-VI films and various types of heterostructures and superlattices with crystal quality better than that achievable in the buffer layer (with delta = 100-300 arcsec), over a large area with good uniformity.
Item Type: | Conference Item (UNSPECIFIED) | ||||
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Subjects: | T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | THIN SOLID FILMS | ||||
Publisher: | ELSEVIER SCIENCE SA LAUSANNE | ||||
ISSN: | 0040-6090 | ||||
Official Date: | 15 October 1995 | ||||
Dates: |
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Volume: | 267 | ||||
Number: | 1-2 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 134-137 | ||||
Publication Status: | Published | ||||
Title of Event: | Workshop on Molecular Beam Epitaxy-Growth Physics and Technology (MBE-GPT 94) | ||||
Location of Event: | WARSAW, POLAND | ||||
Date(s) of Event: | DEC 12-15, 1994 |
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