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OPTICAL-PROPERTIES OF SI-SI1-XGEX AND SI-GE NANOSTRUCTURES
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UNSPECIFIED (1995) OPTICAL-PROPERTIES OF SI-SI1-XGEX AND SI-GE NANOSTRUCTURES. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 6 (5). pp. 356-362. ISSN 0957-4522.
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Abstract
This paper reviews the current research status on the optical properties of Si-Si1-xGex and Si-Ge nanostructures. Although this is a relatively new field, existing research has already achieved promising results in terms of both physics and possible device applications including the effect of process-induced strain in nanostructures, quantum confinement and improved optical efficiency of collective excitation in wires with reduced dimension, and especially the huge improvement of optical efficiency in quantum dots after nanofabrication. These results potentially open a new field of research into both the physics of Si-Si1-xGex nanostructures and the possible applications of them in cheap Si based optoelectronic industry.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering T Technology > TA Engineering (General). Civil engineering (General) Q Science > QC Physics |
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Journal or Publication Title: | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | ||||
Publisher: | CHAPMAN HALL LTD | ||||
ISSN: | 0957-4522 | ||||
Official Date: | October 1995 | ||||
Dates: |
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Volume: | 6 | ||||
Number: | 5 | ||||
Number of Pages: | 7 | ||||
Page Range: | pp. 356-362 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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