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TUNING OF THE QUANTUM-HALL-EFFECT-STATE INSULATOR TRANSITION BY TILTING OF MAGNETIC-FIELD
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UNSPECIFIED (1995) TUNING OF THE QUANTUM-HALL-EFFECT-STATE INSULATOR TRANSITION BY TILTING OF MAGNETIC-FIELD. PHYSICAL REVIEW B, 52 (16). pp. 11638-11641.
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Abstract
In a dilute two-dimensional hole gas located at a Si/SiGe heterojunction we have investigated the variation of magnetoresistance and Hall resistance with tilting of magnetic field. The only pronounced effect of the longitudinal component of held is a strong increase of the magnetoresistance in the insulating state located between the quantum-Hall-effect states with filling factors 1 and 3. The Hall resistance in the insulating state was found to be insensitive to the longitudinal field. A model is proposed that explains the appearance of an insulating state interrupted by the quantum-Hall-effect states. It describes a strong dependence of the insulating state width on the ratio of the Zeeman splitting and cyclotron energies. It is shown that the latter effect might be responsible for our observations.
Item Type: | Journal Item | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | PHYSICAL REVIEW B | ||||
Publisher: | AMERICAN PHYSICAL SOC | ||||
ISSN: | 1098-0121 | ||||
Official Date: | 15 October 1995 | ||||
Dates: |
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Volume: | 52 | ||||
Number: | 16 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 11638-11641 | ||||
Publication Status: | Published |
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