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QUANTUM HALL-EFFECT IN GE1-XSIX/(111)GE MQW SAMPLES OF NONSTANDARD 6-POINT CONTACT GEOMETRY
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UNSPECIFIED (1995) QUANTUM HALL-EFFECT IN GE1-XSIX/(111)GE MQW SAMPLES OF NONSTANDARD 6-POINT CONTACT GEOMETRY. SUPERLATTICES AND MICROSTRUCTURES, 17 (3). pp. 301-305. ISSN 0749-6036.
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Abstract
We investigate the Quantum Hail Effect (QHE) in selectively boron-doped GeSi/(111)Ge multi-quantum well (MQW) samples of non standard geometry with six-point contacts disconnected from the sample edges. The Hail resistance shows a well-pronounced quantisation that is consistent with integral QHE (IQHE) value (h/ve(2)) at temperature T = 4.2K. When the temperature was lower than 2.5K, unusual peaks on the R(xy) plateaux were observed. We explain this behaviour by non-equilibrium population. of Landau levels that results from the separation of current contacts from the edge of the sample. (C) 1995 Academic Press Limited
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | SUPERLATTICES AND MICROSTRUCTURES | ||||
Publisher: | ACADEMIC PRESS (LONDON) LTD | ||||
ISSN: | 0749-6036 | ||||
Official Date: | 1995 | ||||
Dates: |
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Volume: | 17 | ||||
Number: | 3 | ||||
Number of Pages: | 5 | ||||
Page Range: | pp. 301-305 | ||||
Publication Status: | Published |
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