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RAMAN-SPECTROSCOPY OF DRY-ETCHED SI-SI1-XGEX QUANTUM DOTS
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UNSPECIFIED (1995) RAMAN-SPECTROSCOPY OF DRY-ETCHED SI-SI1-XGEX QUANTUM DOTS. SOLID STATE COMMUNICATIONS, 94 (5). pp. 369-372. ISSN 0038-1098.
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Abstract
Si-S1-xGex (x=0.2 similar to 0.3) quantum dots of 50 similar to 60nm in diameter fabricated by using electron beam lithography and reactive ion etching were characterized by Raman spectroscopy. Clear evidence of process-induced strain relief was found in addition to the observation of features from enhanced multi-phonons and Si-Si1-xGex intermixing arising from the process-induced crystal symmetry breakdown in the nanostructured quantum dots.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | SOLID STATE COMMUNICATIONS | ||||
Publisher: | PERGAMON-ELSEVIER SCIENCE LTD | ||||
ISSN: | 0038-1098 | ||||
Official Date: | May 1995 | ||||
Dates: |
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Volume: | 94 | ||||
Number: | 5 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 369-372 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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