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DIFFUSION OF DELTA-DOPED BORON IN SILICON FOLLOWING OXIDATION
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UNSPECIFIED (1993) DIFFUSION OF DELTA-DOPED BORON IN SILICON FOLLOWING OXIDATION. ELECTRONICS LETTERS, 29 (3). pp. 263-264. ISSN 0013-5194.
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Abstract
Samples from a silicon wafer containing a boron doped delta layer were exposed to plasma oxidation and rapid thermal processing (RTP). It is demonstrated experimentally for the first time that there is no enhanced diffusion resulting from oxidation by plasma anodisation, making it well suited to complement low temperature processing.
Item Type: | Journal Article | ||||
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Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering | ||||
Journal or Publication Title: | ELECTRONICS LETTERS | ||||
Publisher: | IEE-INST ELEC ENG | ||||
ISSN: | 0013-5194 | ||||
Official Date: | 4 February 1993 | ||||
Dates: |
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Volume: | 29 | ||||
Number: | 3 | ||||
Number of Pages: | 2 | ||||
Page Range: | pp. 263-264 | ||||
Publication Status: | Published |
Data sourced from Thomson Reuters' Web of Knowledge
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