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OBSERVATION OF NOVEL TRANSPORT PHENOMENA IN A SI0.8GE0.2 2-DIMENSIONAL HOLE GAS
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UNSPECIFIED (1993) OBSERVATION OF NOVEL TRANSPORT PHENOMENA IN A SI0.8GE0.2 2-DIMENSIONAL HOLE GAS. PHYSICAL REVIEW B, 47 (15). pp. 10016-10019.
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Abstract
We report measurements of the magnetoresistance and Hall coefficient of a two-dimensional hole gas defined at a remote-doped Si/Si0.8Ge0.2 heterojunction. In addition to the usual quantum interference and interaction corrections, one can clearly resolve effects relating to the temperature dependence of the static dielectric function, strain-induced suppression of spin-orbit scattering, and anisotropy of the hole g factor. A number of issues worthy of further theoretical study are suggested.
Item Type: | Journal Item | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | PHYSICAL REVIEW B | ||||
Publisher: | AMERICAN PHYSICAL SOC | ||||
ISSN: | 0163-1829 | ||||
Official Date: | 15 April 1993 | ||||
Dates: |
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Volume: | 47 | ||||
Number: | 15 | ||||
Number of Pages: | 4 | ||||
Page Range: | pp. 10016-10019 | ||||
Publication Status: | Published |
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