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GROWTH-STUDIES ON SI0.8GE0.2 CHANNEL 2-DIMENSIONAL HOLE GASES
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UNSPECIFIED (1992) GROWTH-STUDIES ON SI0.8GE0.2 CHANNEL 2-DIMENSIONAL HOLE GASES. APPLIED PHYSICS LETTERS, 61 (12). pp. 1453-1455. ISSN 0003-6951.
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Abstract
We report a study of the influences of MBE conditions on the low-temperature mobilities of Si/Si0.8Ge0.2 2DHG structures. A significant dependence of 2DHG mobility on growth temperature is observed with the maximum mobility of 3640 cm2 V-1 s-1 at 5.4 K being achieved at the relatively high-growth temperature of 640-degrees-C. This dependence is associated with a reduction in interface charge density. Studies on lower mobility samples show that Cu contamination can be reduced both by growth interruptions and by modifications to the Ge source; this reduction produces improvements in the low-temperature mobilities. We suggest that interface charge deriving from residual metal contamination is currently limiting the 4-K mobility.
Item Type: | Journal Article | ||||
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Subjects: | Q Science > QC Physics | ||||
Journal or Publication Title: | APPLIED PHYSICS LETTERS | ||||
Publisher: | AMER INST PHYSICS | ||||
ISSN: | 0003-6951 | ||||
Official Date: | 21 September 1992 | ||||
Dates: |
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Volume: | 61 | ||||
Number: | 12 | ||||
Number of Pages: | 3 | ||||
Page Range: | pp. 1453-1455 | ||||
Publication Status: | Published |
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